Based in San Jose, NEO Semiconductor has announced a groundbreaking advancement in memory technology with the introduction of their latest 3D X-DRAM cells. These innovative cell designs, identified as 1T1C (one transistor, one capacitor) and 3T0C (three transistors, zero capacitors), are poised to expand the horizons of conventional DRAM, offering a tenfold increase in capacity.
Originally unveiled two years ago, these 3D X-DRAM cells represent a significant leap forward in DRAM capabilities. According to simulations conducted by NEO Semiconductor, these next-generation cells are capable of achieving an impressive 512 Gb or 64 GB capacity per module, surpassing the limitations of current market solutions.
Performance and Efficiency
With read/write speeds reaching 10 nanoseconds and data retention extending beyond 9 minutes, the performance metrics of these 3D X-DRAM cells are exceptional. The cell architecture is based on indium gallium zinc oxide (IGZO), a material widely used in display technologies. This enables the cells to be manufactured in a stackable format akin to 3D NAND flash memory, enhancing both capacity and energy efficiency.
NEO Semiconductor’s approach allows for the adaptation of this design within existing 3D NAND production infrastructure, minimizing the need for extensive capital investments. The full potential of these designs will be showcased at the upcoming IEEE IMW event this month.
The Competitive Landscape
While NEO Semiconductor is at the forefront, other emerging technologies, such as FeRAM-based DRAM+, are also entering the competitive arena. Meanwhile, industry giants like SK hynix continue to push the limits of traditional DRAM technology.
Nonetheless, the spotlight remains on NEO Semiconductor’s ambitious 512 Gb modules. Looking ahead, the company plans to produce test chips by 2026, with a roadmap leading to the development of 1Tb integrated circuits by 2030. This evolution will pave the way for 2Tb capacities within a single RAM module.
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